Transient lateral photovoltaic effect observed in Ti–SiO2–Si structure

Localized surface plasmon resonances dominated giant lateral photovoltaic effect observed in ZnO/Ag/Si nanostructure

We report substantially enlarged lateral photovoltaic effect (LPE) in the ZnO/Ag/Si nanostructures. The maximum LPE sensitivity (55.05 mv/mm) obtained in this structure is about seven times larger than that observed in the control sample (7.88 mv/mm) of ZnO/Si. We attribute this phenomenon to the strong localized surface plasmon resonances (LSPRs) induced by nano Ag semicontinuous films. Quite ...

Magnetic state dependent transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

Photovoltaic Switching Mechanism in Lateral Structure Hybrid Perovskite Solar Cells

Dr. Y. Yuan, Dr. Y. Shao, Dr. Q. Wang, Dr. Z. Xiao, Prof. J. Huang Department of Mechanical and Materials Engineering University of Nebraska-Lincoln Lincoln , NE 68588-0656 , USA E-mail: [email protected] Dr. J. Chae, Dr. A. Centrone Center for Nanoscale Science and Technology National Institute of Standards and Technology 100 Bureau Drive Gaithersburg , MD 20899 , USA Dr. J. Chae Maryland Nanoce...

Large Lateral Photovoltaic Effect in Metal-(Oxide-) Semiconductor Structures

The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structu...

Large Lateral Photovoltaic Effect in MoS2/GaAs Heterojunction

Molybdenum disulfide (MoS2) nanoscaled films are deposited on GaAs substrates via magnetron sputtering technique, and MoS2/GaAs heterojunctions are fabricated. The lateral photovoltaic effect (LPE) of the fabricated MoS2/GaAs heterojunctions is investigated. The results show that a large LPE can be obtained in the MoS2/n-GaAs heterojunction. The LPE exhibits a linear dependence on the position ...